leshan radio company, ltd. mbd110?1/5 1 3 2 dual schottky barrier diodes maximum ratings rating symbol value unit reverse voltage mbd110dwt1 v r 7.0 vdc mbd330dwt1 30 mbd770dwt1 70 forward power dissipation p f 120 mw t a = 25c junction temperature t j ?55 to +125 c storage temperature range t stg ?55 to +150 c device marking mbd110dwt1 = m4 mbd330dwt1 = t4 mbd770dwt1 = h5 thermal clad is a trademark of the bergquist company. 6 4 5 sot?363 case 419b?01, style 6 mbd110dwt1 mbd330dwt1 mbd770dwt1 application circuit designs are moving toward the consolidation of device count and into smaller packages. the new sot?363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six? leaded package. the sot?363 is ideal for low?power surface mount applications where board space is at a premium, such as portable products. 123 anode n/c cathode cathode n/c anode 654 surface mount comparisons: sot?363 sot?23 area (mm 2 ) 4.6 7.6 max package p d (mw) 120 225 device count 2 1 space savings: package 1 sot?23 2 sot?23 sot?363 40% 70% the mbd110dw, mbd330dw, and mbd770dw devices are spin?offs of our popular mmbd101lt1, mmbd301lt1, and mmbd701lt1 sot?23 devices. they are designed for high?efficiency uhf and vhf detector applications. readily available to many other fast switching rf and digital applications. extremely low minority carrier lifetime very low capacitance low reverse leakage
leshan radio company, ltd. mbd110?2/5 mbd110dwt1 mbd330dwt1 mbd770dwt1 electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage v (br)r volts (i r = 10 a) mbd110dwt1 7.0 10 ? mbd330dwt1 30 ? ? mbd770dwt1 70 ? ? diode capacitance c t pf (v r = 0, f = 1.0 mhz, note 1) mbd110dwt1 ? 0.88 1.0 total capacitance c t pf (v r = 15 volts, f = 1.0 mhz) mbd330dwt1 ? 0.9 1.5 (v r = 20 volts, f = 1.0 mhz) mbd770dwt1 ? 0.5 1.0 reverse leakage i r (v r = 3.0 v) mbd110dwt1 ? 0.02 0.25 a (v r = 25 v) mbd330dwt1 ? 13 200 nadc (v r = 35 v) mbd770dwt1 ? 9.0 200 nadc noise figure nf db (f = 1.0 ghz, note 2) mbd110dwt1 ? 6.0 ? forward voltage v f vdc (i f = 10 ma) mbd110dwt1 ? 0.5 0.6 (i f = 1.0 madc) mbd330dwt1 ? 0.38 0.45 (i f = 10 ma) ? 0.52 0.6 (i f = 1.0 madc) mbd770dwt1 ? 0.42 0.5 (i f = 10 ma) ? 0.7 1.0
leshan radio company, ltd. mbd110?3/5 typical characteristics ? mbd110dwt1 mbd110dwt1 mbd330dwt1 mbd770dwt1 30 40 50 60 70 80 90 100 110 120 130 1.0 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.3 0.4 0.5 0.6 0.7 0.8 100 10 1.0 0.1 0 1.0 2.0 3.0 4.0 1.0 0.9 0.8 0.7 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 11 10 9 8 7 6 5 4 3 2 1 nf, noise figure (db) c, capacitance (pf) i r , reverse leakage ( a) t a , ambient temperature (c) figure 1. reverse leakage v f , forward voltage (volts) figure 2. forward voltage i f , forward current (ma) v r , reverse voltage (volts) figure 3. capacitance p lo , local oscillator power (mw) figure 4. noise figure figure 5. noise figure test circuit notes on testing and specifications note 1 ? c c and c t are measured using a capaci- tance bridge (boonton electronics model 75a or equivalent). note 2 ? noise figure measured with diode under test in tuned diode mount using uhf noise source and local oscillator (lo) frequency of 1.0 ghz. the lo power is adjusted for 1.0 mw. i f amplifier nf = 1.5 db, f = 30 mhz, see figure 5. note 3 ? l s is measured on a package having a short instead of a die, using an impedance bridge (boonton radio model 250a rx meter).
leshan radio company, ltd. mbd110?4/5 typical characteristics mbd330dwt1 mbd110dwt1 mbd330dwt1 mbd770dwt1 0 3.0 6.0 9.0 12 15 18 21 24 27 30 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 010 20304050607080 90100 500 400 300 200 100 0 0 6.0 12 18 24 30 10 1.0 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 100 10 1.0 0.1 v r , reverse voltage (volts) figure 6. total capacitance i f , forward current (ma) figure 7. minority carrier lifetime i f , forward current (ma) , minority carrier lifetime (ps) c t , total capacitance (pf) i r , reverse leakage ( a) v r , reverse voltage (volts) figure 8. reverse leakage v f , forward voltage (volts) figure 9. forward voltage
leshan radio company, ltd. mbd110?5/5 typical characteristics mbd770dwt1 mbd110dwt1 mbd330dwt1 mbd770dwt1 0 5.0 10 15 20 25 30 35 40 45 50 2.0 1.6 1.2 0.8 0.4 0 010 20304050607080 90100 500 400 300 200 100 0 0 1020304050 10 1.0 0.1 0.01 0.001 0.2 0.4 0.8 1.2 1.6 2.0 100 10 1.0 0.1 v r , reverse voltage (volts) figure 10 . total capacitance i f , forward current (ma) figure 11. minority carrier lifetime i f , forward current (ma) , minority carrier lifetime (ps) c t , total capacitance (pf) i r , reverse leakage ( a) v r , reverse voltage (volts) figure 12. reverse leakage v f , forward voltage (volts) figure 13. forward voltage
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